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| NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES * * * HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz 2 NE66719 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 1.60.1 0.80.1 1.60.1 1.0 0.2 NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process. This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above. 0.5 3 1 0.750.05 0.6 0 to 0.1 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 5 mA Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz Maximum Stable Gain5 at VCE = 2 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 10 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF GHz dB dB dB dB dB 9.0 9.5 UNITS nA nA 50 18 70 21 12.5 13.5 11.0 11.5 1.1 22 0.24 0.30 1.5 MIN NE66719 2SC55667 19 TYP MAX 100 100 100 DC IEBO hFE fT MAG MSG |S21e|2 |S21e|2 NF IP3 Cre Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MAG = S21 (K- (K2 -1) ) S12 5. MSG = S21 S12 RF California Eastern Laboratories 0.15 -0.05 +0.1 0.3 -0 +0.1 DESCRIPTION 0.5 +0.1 -0 UB NE66719 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 15 3.3 1.5 35 115 150 -65 to +150 TYPICAL NOISE PARAMETERS (TA = 25C) FREQ. (GHz) NFMIN (dB) GA (dB) OPT MAG ANG Rn/50 VCE = 2 V, IC = 3 mA 0.8 1.0 1.5 1.8 2.0 2.5 0.83 0.86 0.93 0.97 1.00 1.07 18.1 16.3 13.2 11.9 11.1 9.6 0.37 0.36 0.31 0.26 0.23 0.16 22.9 29.3 46.7 60.0 70.8 107.0 0.22 0.21 0.19 0.16 0.15 0.12 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy substrate. VCE = 2 V, IC = 5 mA 0.8 1.0 1.5 1.8 2.0 2.5 0.88 0.91 0.96 1.00 1.02 1.08 18.5 16.7 13.5 12.2 11.4 9.8 0.24 0.23 0.18 0.14 0.11 0.06 19.6 26.6 41.2 54.6 68.2 128.5 0.19 0.18 0.17 0.15 0.14 0.12 VCE = 2 V, IC = 7 mA 0.8 1.0 1.5 1.8 2.0 2.5 0.8 1.0 1.5 1.8 2.0 2.5 1.07 1.09 1.13 1.16 1.17 1.22 1.25 1.27 1.31 1.34 1.35 1.40 19.1 17.0 13.8 12.5 11.7 9.9 19.1 17.4 13.9 12.5 11.7 10.1 0.13 0.12 0.06 0.03 0.02 0.07 0.04 0.03 0.04 0.07 0.09 0.16 35.5 11.3 27.3 75.9 119.0 -115.5 -59.8 117.5 -75.8 -88.8 -112.4 -112.0 0.17 0.17 0.16 0.14 0.14 0.14 0.16 0.15 0.16 0.16 0.15 0.15 ORDERING INFORMATION PART NUMBER NE66719 NE66719-T1 QUANTITY Bulk 3k pcs/reel PACKAGING 8 mm wide embossed taping Pin 3 (collector) faces the perforation VC = 2 V, IC = 10 mA VC = 2 V, IC = 20 mA 0.8 1.0 1.5 1.8 2.0 2.5 1.69 1.70 1.74 1.77 1.78 1.83 19.2 17.3 14.0 12.6 11.8 10.2 0.15 0.18 0.22 0.24 0.24 0.27 -146.7 -138.6 -126.0 -121.9 -119.9 -115.1 0.16 0.16 0.18 0.19 0.20 0.22 NE66719 TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 0.5 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation, Ptot (mW) Mounted on Glass Epoxy Board (1.08 cm2 x 1.0 mm (t) ) 200 Reverse Transfer Capacitance Cre f = 1 MHz 0.4 115 100 0.3 0.2 50 0.1 0 25 50 75 100 125 150 0 1 2 3 4 5 Ambient Temperature, TA (C) Collector to BaseVoltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 40 VCE = 2 V 40 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IB 50 A step 450 A Collector Current, IC (mA) Collector Current, lC (mA) 30 30 20 20 250 A 10 10 IB = 50 A 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VcE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 2 V GAIN BANDWIDTH vs. COLLECTOR CURRENT 25 f = 2 GHz Gain Bandwdth, fT (GHz) 20 2V 15 DC Current Gain, hFE 100 10 VCE = 1 V 5 10 0.001 0 0.01 0.1 1 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) NE66719 TYPICAL PERFORMANCE CURVES (TA = 25C) INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. FREQUENCY INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. FREQUENCY Insertion Power Gain, |S21e|2 (dB) Maximum Available Power Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Power Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 40 35 30 25 S21e 20 MAG 15 10 5 0 0.1 2 40 35 30 25 S21e 20 MAG 15 10 5 0 0.1 2 VCE = 1 V IC = 20 mA VCE = 2 V IC = 20 mA MSG MSG 1 10 1 0 Frequency, f (GHz) INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. COLLECTOR CURRENT Frequency, f (GHz) INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S21e|2 (dB) Maximum Available Power Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 20 18 16 MSG 14 12 10 8 6 4 2 S21e 2 Insertion Power Gain, |S21e|2 (dB) Maximum Available Power Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 20 18 16 MSG 14 12 S21e 10 8 6 4 2 0 1 10 100 2 VCE = 1 V f = 2 GHz MAG VCE = 2 V f = 2 GHz MAG 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 30 VCE = 2 V, f = 1 GHz Icq = 5 mA (RF OFF) 100 30 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 100 VCE = 1 V, f = 2 GHz Icq = 5 mA (RF OFF) Output Power, Pout (dBm) Output Power, Pout (dBm) 20 80 20 80 10 Pout 0 60 10 Pout 0 60 40 40 IC -10 20 -10 IC 20 -20 -30 -20 -10 0 10 0 20 -20 -30 -20 -10 0 10 0 20 Input Power, Pin (dBm) Input Power, Pin (dBm) NE66719 TYPICAL PERFORMANCE CURVES (TA = 25C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 VCE = 2 V f = 1 GHz 25 10 VCE = 2 V f = 1.5 GHz NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 Associated Gain, Ga (dB) Noise Figure, NF (dB) Ga 6 Noise Figure, NF (dB) 20 8 20 Ga 6 15 15 4 10 4 10 2 NF 0 1 10 5 2 NF 5 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 VCE = 2 V f = 2 GHz 25 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 VCE = 2 V f = 2.5 GHz Associated Gain, Ga (dB) Noise Figure, NF (dB) Noise Figure, NF (dB) 20 20 6 Ga 4 15 6 Ga 4 15 10 10 2 NF 0 1 10 5 2 NF 5 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) Remark The graphs indicate nominal characteristics. Associated Gain, Ga (dB) 8 8 Associated Gain, Ga (dB) 8 NE66719 TYPICAL SCATTERING PARAMETERS (TA = 25C) VDS = 1 V, IC = 5 mA, ZO = 50 FREQUENCY GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 6.0 7.0 8.0 MAG 0.822 0.793 0.738 0.678 0.614 0.553 0.501 0.449 0.409 0.369 0.340 0.312 0.285 0.261 0.241 0.223 0.210 0.187 0.180 0.170 0.167 0.162 0.160 0.163 0.165 0.167 0.174 0.175 0.178 0.182 0.339 0.530 0.623 0.713 0.772 S11 ANG -12.2 -21.9 -31.8 -39.8 -48.4 -54.5 -60.3 -65.5 -70.1 -75.3 -79.2 -83.2 -88.5 -92.3 -97.8 -101.6 -107.6 -113.6 -119.9 -127.5 -134.5 -140.7 -146.2 -154.2 -158.4 -163.3 -169.0 -173.8 -179.0 173.3 139.7 117.8 103.9 90.6 85.2 MAG 12.268 11.711 10.871 10.101 9.228 8.389 7.694 7.051 6.534 6.062 5.677 5.310 4.979 4.694 4.421 4.224 4.011 3.825 3.653 3.513 3.392 3.255 3.142 3.041 2.938 2.853 2.774 2.687 2.616 2.548 2.015 1.546 1.261 0.996 0.828 S21 ANG 167.4 156.4 146.2 136.6 128.3 121.1 115.3 110.0 104.8 100.4 96.3 92.4 88.7 85.3 82.2 79.1 76.1 73.3 70.4 67.5 65.1 62.8 59.9 57.4 55.2 52.7 50.6 48.2 46.0 43.9 21.3 -0.8 -14.3 -30.5 -33.0 MAG 0.016 0.030 0.043 0.054 0.062 0.070 0.077 0.083 0.089 0.094 0.100 0.105 0.110 0.116 0.122 0.128 0.134 0.140 0.147 0.154 0.160 0.167 0.174 0.182 0.189 0.197 0.204 0.212 0.220 0.229 0.321 0.398 0.443 0.476 0.495 S12 ANG 83.6 76.8 71.4 67.3 64.0 61.5 59.8 58.9 58.1 57.9 57.6 57.5 57.4 57.4 57.4 57.5 57.6 57.6 57.2 57.3 57.4 57.1 57.0 56.7 56.2 55.8 55.4 54.8 54.1 53.6 43.7 30.5 17.7 5.6 -2.3 MAG 0.970 0.933 0.878 0.816 0.753 0.692 0.637 0.592 0.552 0.516 0.486 0.460 0.435 0.413 0.396 0.379 0.364 0.350 0.337 0.326 0.315 0.306 0.298 0.289 0.280 0.275 0.269 0.265 0.259 0.253 0.301 0.451 0.585 0.693 0.752 S22 ANG -8.8 -17.5 -25.2 -32.0 -37.6 -42.4 -46.3 -49.7 -52.7 -55.3 -57.8 -60.0 -62.1 -64.5 -66.6 -68.8 -70.9 -73.1 -75.5 -78.1 -80.6 -83.5 -86.4 -89.7 -93.3 -97.1 -101.3 -105.0 -108.6 -113.3 -166.8 154.0 130.4 112.1 99.3 NE66719 TYPICAL SCATTERING PARAMETERS (TA = 25C) VDS = 2 V, IC = 5 mA, ZO = 50 FREQUENCY GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 6.0 7.0 8.0 MAG 0.845 0.821 0.769 0.712 0.654 0.596 0.539 0.492 0.450 0.409 0.378 0.347 0.322 0.295 0.272 0.254 0.233 0.212 0.200 0.183 0.177 0.168 0.163 0.160 0.156 0.157 0.158 0.154 0.151 0.156 0.297 0.504 0.605 0.704 0.767 S11 ANG -9.9 -19.3 -27.8 -35.8 -43.2 -48.8 -53.8 -58.6 -62.4 -66.4 -70.4 -73.8 -77.2 -80.9 -84.3 -87.4 -91.3 -96.3 -100.3 -106.4 -113.6 -118.9 -121.6 -130.8 -137.4 -140.2 -146.1 -153.9 -158.8 -167.1 149.1 123.2 107.5 93.5 87.3 MAG 11.956 11.451 10.734 10.039 9.282 8.499 7.844 7.217 6.715 6.309 5.886 5.532 5.212 4.914 4.645 4.437 4.220 4.028 3.851 3.710 3.579 3.441 3.319 3.222 3.120 3.031 2.945 2.861 2.781 2.705 2.171 1.700 1.371 1.082 0.877 S21 ANG 168.4 158.1 148.4 139.3 131.4 124.2 118.2 113.2 107.9 103.5 99.4 95.4 91.8 88.4 85.0 81.8 79.0 76.0 73.2 70.5 67.9 65.6 62.9 60.4 58.1 55.8 53.5 51.3 49.1 46.8 24.0 1.0 -13.7 -30.8 -33.9 MAG 0.014 0.027 0.039 0.049 0.057 0.065 0.071 0.077 0.083 0.088 0.093 0.098 0.103 0.109 0.114 0.120 0.126 0.131 0.138 0.145 0.151 0.158 0.165 0.172 0.179 0.187 0.194 0.202 0.210 0.219 0.316 0.401 0.453 0.488 0.506 S12 ANG 86.8 79.0 73.5 69.2 66.3 63.6 62.1 60.9 60.4 59.9 59.7 59.5 59.5 59.5 59.6 59.7 59.9 60.0 59.9 60.0 60.2 60.1 59.9 59.7 59.4 59.2 58.7 58.3 57.6 57.1 47.7 34.0 20.3 7.3 -1.2 MAG 0.978 0.947 0.901 0.846 0.789 0.734 0.682 0.637 0.600 0.564 0.533 0.507 0.484 0.461 0.443 0.426 0.411 0.397 0.384 0.373 0.361 0.352 0.344 0.335 0.324 0.319 0.312 0.306 0.299 0.290 0.312 0.448 0.587 0.701 0.760 S22 ANG -7.7 -15.3 -22.3 -28.4 -33.6 -38.0 -41.8 -45.0 -47.6 -50.1 -52.4 -54.5 -56.6 -58.6 -60.5 -62.3 -64.2 -66.2 -68.2 -70.4 -72.5 -75.2 -77.6 -80.3 -83.4 -86.8 -90.3 -93.3 -96.5 -100.5 -152.1 163.8 136.6 116.1 102.0 NE66719 TYPICAL SCATTERING PARAMETERS (TA = 25C) VDS = 2 V, IC = 20 mA, ZO = 50 FREQUENCY GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 6.0 7.0 8.0 MAG 0.660 0.585 0.505 0.444 0.381 0.328 0.287 0.255 0.228 0.202 0.181 0.161 0.148 0.135 0.117 0.106 0.098 0.085 0.074 0.070 0.071 0.066 0.071 0.079 0.079 0.087 0.094 0.098 0.102 0.111 0.279 0.484 0.577 0.684 0.757 S11 ANG -16.7 -28.5 -39.1 -46.6 -53.2 -57.1 -60.5 -63.8 -66.4 -69.7 -72.3 -74.2 -77.6 -82.0 -83.8 -87.9 -94.4 -101.7 -108.3 -118.5 -131.9 -145.1 -147.6 -160.0 -168.3 -169.9 -176.2 176.4 170.7 161.5 137.1 117.4 104.4 92.6 86.6 MAG 21.907 19.701 17.100 14.863 12.907 11.320 10.052 9.004 8.170 7.508 6.927 6.421 5.974 5.611 5.262 4.994 4.720 4.482 4.274 4.102 3.958 3.794 3.648 3.531 3.406 3.301 3.212 3.110 3.024 2.945 2.345 1.854 1.555 1.265 1.058 S21 ANG 161.6 146.5 134.4 124.2 116.5 110.0 105.0 100.7 96.5 93.0 89.8 86.5 83.8 81.0 78.5 75.9 73.7 71.2 68.8 66.4 64.3 62.5 60.1 58.0 56.0 53.8 52.2 50.1 48.1 46.0 26.1 5.5 -8.8 -26.0 -31.5 MAG 0.012 0.024 0.033 0.041 0.048 0.055 0.062 0.069 0.076 0.083 0.090 0.097 0.104 0.111 0.119 0.126 0.134 0.142 0.150 0.158 0.166 0.174 0.182 0.190 0.198 0.207 0.215 0.223 0.231 0.240 0.329 0.402 0.446 0.480 0.499 S12 ANG 80.0 76.1 73.2 70.8 70.0 69.3 69.3 69.3 69.2 69.1 69.0 68.8 68.4 68.0 67.6 67.2 66.7 66.2 65.4 64.9 64.3 63.6 62.9 62.0 61.1 60.2 59.4 58.4 57.4 56.5 44.7 31.3 18.6 6.6 -1.5 MAG 0.931 0.852 0.761 0.678 0.607 0.551 0.505 0.470 0.442 0.419 0.399 0.382 0.367 0.352 0.341 0.330 0.320 0.309 0.301 0.293 0.284 0.277 0.271 0.263 0.253 0.248 0.241 0.235 0.228 0.219 0.238 0.375 0.515 0.641 0.709 S22 ANG -11.7 -22.2 -30.0 -35.3 -38.9 -41.6 -43.4 -44.9 -46.2 -47.4 -48.7 -50.0 -51.3 -52.8 -54.4 -55.9 -57.4 -59.2 -61.2 -63.4 -65.5 -68.1 -70.7 -73.6 -76.9 -80.5 -84.3 -87.7 -91.3 -95.6 -155.9 159.4 135.1 116.5 103.3 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 10/23/02 A Business Partner of NEC Compound Semiconductor Devices, Ltd. |
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